Published May 1, 1982 | Version v1
Journal article Metadata-only

Neutron transmutation doped silicon detectors

Creators

  • 1. Korea Univ., Tokyo (Japan). Dept. of Electronics Engineering
  • 2. Brookhaven National Lab., Upton, NY (USA)
  • 3. Komatsu Electronic Metals Co., Hiratsuka (Japan)
  • 4. Tokyo Univ., Tanashi (Japan). Inst. for Nuclear Study
  • 5. Rikkyo Univ., Yokosuka, Kanagawa (Japan). Inst. for Atomic Energy

Description

High resistivity n-type silicons has been produced from ultra-high purity p-type silicon by neutron transmutation doping. The material produced by this method has better dopant homogeneity and controllability than carefully produced floating zone crystals. The characteristics of a variation of detectors made from this material are equivalent to those of the conventional silicon detectors. (orig.)

Additional details

Publishing Information

Journal Title
Nucl. Instrum. Methods Phys. Res.
Journal Volume
196
Journal Issue
1
Series
Nucl. Instrum. Methods Phys. Res.
Journal Page Range
143-148
ISSN
0029-554X

Conference

Title
INS international symposium on nuclear radiation detectors.
Dates
23 - 26 Mar 1981.
Place
Tokyo, Japan.

INIS

Country of Publication
Netherlands
Country of Input or Organization
Netherlands
INIS RN
13700453
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ALPHA DETECTION; CRYSTAL DOPING; ENERGY RESOLUTION; N-TYPE CONDUCTORS; NEUTRON BEAMS; SI SEMICONDUCTOR DETECTORS; SILICON
Descriptors DEC
BEAMS; CHARGED PARTICLE DETECTION; ELEMENTS; MEASURING INSTRUMENTS; NUCLEON BEAMS; PARTICLE BEAMS; RADIATION DETECTION; RADIATION DETECTORS; RESOLUTION; SEMICONDUCTOR DETECTORS; SEMICONDUCTOR MATERIALS; SEMIMETALS