Published January 27, 2014 | Version v1
Journal article Metadata-only

Imaging of free carriers in semiconductors via optical feedback in terahertz quantum cascade lasers

Creators

  • 1. CNR-IFN UOS Bari, via Amendola 173, 70126 Bari (Italy)
  • 2. Dipartimento Interateneo di Fisica, Università degli Studi e Politecnico di Bari, via Amendola 173, 70126 Bari (Italy)
  • 3. Dipartimento di Scienza ed Alta Tecnologia, Università dell'Insubria, via Valleggio 11, 22100 Como (Italy)
  • 4. NEST, CNR - Istituto Nanoscienze and Scuola Normale Superiore, piazza San Silvestro 12, 56127 Pisa (Italy)

Description

To monitor the density of photo-generated charge carriers on a semiconductor surface, we demonstrate a detectorless imaging system based on the analysis of the optical feedback in terahertz quantum cascade lasers. Photo-excited free electron carriers are created in high resistivity n-type silicon wafers via low power (≅40 mW/cm2) continuous wave pump laser in the near infrared spectral range. A spatial light modulator allows to directly reconfigure and control the photo-patterned intensity and the associated free-carrier density distribution. The experimental results are in good agreement with the numerical simulations

Additional details

Identifiers

DOI
10.1063/1.4863671;

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
104
Journal Issue
4
Journal Page Range
p. 041112-041112.5
ISSN
0003-6951
CODEN
APPLAB

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
45102070
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
CARRIER DENSITY; CHARGE CARRIERS; COMPUTERIZED SIMULATION; ELECTRIC CONDUCTIVITY; ELECTRONS; FEEDBACK; N-TYPE CONDUCTORS; SILICON; SOLID STATE LASERS; SURFACES; THZ RANGE; VISIBLE RADIATION
Descriptors DEC
ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; ELEMENTARY PARTICLES; ELEMENTS; FERMIONS; FREQUENCY RANGE; LASERS; LEPTONS; MATERIALS; PHYSICAL PROPERTIES; RADIATIONS; SEMICONDUCTOR MATERIALS; SEMIMETALS; SIMULATION

Optional Information

Notes
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