Published 1981
| Version v1
Miscellaneous
Defect annealing in silicon irradiated with reactor neutrons
- 1. Nauchno-Issledovatel'skij Fiziko-Khimicheskij Inst., Moscow (USSR)
Description
The dependence of radiation defect (RD) annelaing in silicon irradiated by reactor neutrons on the initial state of the crystals, radiation conditions and the succeeding heat treatment is investigated. High-stable RD formation is shown to be caused by oxygen, carbon and hydrogen presence in the crystals. RD stability grows with Tsub(reg.) increase. It is determined that defects produced by thermal neutrons affect the residual effects from the fast neutron influence
Additional details
Additional titles
- Original title (Russian)
- Отжиг дефектов в кремнии, облученном реакторными нейтронами
Publishing Information
- Imprint Title
- Radiation damage physics and radiation material science
- Imprint Pagination
- 123 p.
- Journal Issue
- no. 2(16
- Series
- Voprosy atomnoj nauki i tekhniki.
- Journal Page Range
- p. 12-13.
- Report number
- INIS-SU--142
Conference
- Title
- 2. All-union conference on radiation physics of solids.
- Dates
- 24 - 27 Feb 1981.
- Place
- Zvenigorod (USSR).
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 14719116
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANNEALING; CRYSTAL DEFECTS; CRYSTAL DOPING; CRYSTAL GROWTH; ELECTRIC CONDUCTIVITY; FAST NEUTRONS; IMPURITIES; NEUTRON FLUENCE; PHYSICAL RADIATION EFFECTS; SILICON; TEMPERATURE DEPENDENCE; THERMAL NEUTRONS
- Descriptors DEC
- BARYONS; CRYSTAL STRUCTURE; ELECTRICAL PROPERTIES; ELEMENTARY PARTICLES; ELEMENTS; FERMIONS; HADRONS; HEAT TREATMENTS; NEUTRONS; NUCLEONS; PHYSICAL PROPERTIES; RADIATION EFFECTS; SEMIMETALS
Optional Information
- Notes
- 3 refs.; 2 figs. Imprint:Fizika radiatsionnykh povrezhdenij i radiatsionnoe materialovedenie.