Charge-carrier density driving in an inverted GaAs/AlxGa1-xAs heterostructure with imbedded InAs quantum dots by means of backside gate

Published 2010 | Version v1

Journal article Metadata-only

1. Lehrstuhl fuer Angewandte Festkoerperphysik, Ruhr-Universitaet Bochum (Germany)

no abstract available

Additional details

Original title (German): Ladungstraegerdichtesteuerung in einer invertierten GaAs/Al

Journal Title: Verhandlungen der Deutschen Physikalischen Gesellschaft
Journal Issue: Regensburg 2010 issue
Series: Also available as printed version: Verhandlungen der Deutschen Physikalischen Gesellschaft v. 45(3)
Journal Page Range: [1 p.]
ISSN: 0420-0195
CODEN: VDPEAZ

Title: DPG Spring meeting 2010 of the condensed matter section with the divisions biological physics, chemical and polymer physics, crystallography, dielectric solids, dynamics and statistical physics, low temperature physics, magnetism, metal and material physics, physics of socio-economic systems, radiation and medical physics, semiconductor physics, surface science, thin films, vacuum science and technology as well as the working group industry and business, with job market, symposia, teachers' days, tutorials, exhibition of scientific instruments and literature
Dates: 21-26 Mar 2010
Place: Regensburg (Germany)

Country of Publication: Germany
Country of Input or Organization: Germany
INIS RN: 42040315
Subject category: S77: NANOSCIENCE AND NANOTECHNOLOGY; S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator: Conference, No Abstract
Descriptors DEI: ALUMINIUM ARSENIDES; CARRIER DENSITY; CHARGE TRANSPORT; ELECTRON GAS; ELECTRONIC STRUCTURE; GALLIUM ARSENIDES; HETEROJUNCTIONS; INDIUM ARSENIDES; QUANTUM DOTS
Descriptors DEC: ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; NANOSTRUCTURES; PNICTIDES; SEMICONDUCTOR JUNCTIONS