Transport properties of bare and hydrogenated zigzag silicene nanoribbons: Negative differential resistances and perfect spin-filtering effects
- 1. College of Physics and Engineering, Changshu Institute of Technology and Jiangsu Laboratory of Advanced Functional Materials, Changshu 215500 (China)
- 2. College of Physics, Optoelectronics and Energy, Soochow University, Suzhou, Jiangsu 215006 (China)
- 3. School of Physics and Technology, University of Jinan, Jinan, Shandong 250022 (China)
- 4. College of Engineering, Bohai University, Jinzhou 121013 (China)
Description
Ab initio calculations are performed to investigate the spin-polarized transport properties of the bare and hydrogenated zigzag silicene nanoribbons (ZSiNRs). The results show that the ZSiNRs with symmetric (asymmetric) edges prefer the ferromagnetic (antiferromagnetic) as their ground states with the semiconductor properties, while the accordingly antiferromagnetic (ferromagnetic) states exhibit the metallic behaviors. These facts result in a giant magnetoresistance behavior between the ferromagnetic and antiferromagnetic states in the low bias-voltage regime. Moreover, in the ferromagnetic ZSiNRs with asymmetric edges, a perfect spin-filtering effect with 100% positive electric current polarization can be achieved by altering the bias voltage. In addition, we also find that the negative differential resistances prefer the metastable states. The findings here indicate that the asymmetric and symmetric ZSiNRs are promising materials for spintronic applications.
Additional details
Identifiers
- DOI
- 10.1063/1.4896630;
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 116
- Journal Issue
- 12
- Journal Page Range
- p. 124312-124312.8
- ISSN
- 0021-8979
- CODEN
- JAPIAU
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46011894
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANTIFERROMAGNETISM; ASYMMETRY; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; FILTERS; GROUND STATES; MAGNETORESISTANCE; METASTABLE STATES; NANOSTRUCTURES; POLARIZATION; SEMICONDUCTOR MATERIALS; SPIN; SPIN ORIENTATION; SYMMETRY
- Descriptors DEC
- ANGULAR MOMENTUM; CURRENTS; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ENERGY LEVELS; EXCITED STATES; MAGNETISM; MATERIALS; ORIENTATION; PARTICLE PROPERTIES; PHYSICAL PROPERTIES
Optional Information
- Notes
- (c) 2014 AIP Publishing LLC