Published April 1995 | Version v1
Journal article Metadata-only

The use of Auger spectroscopy for analysis of surface composition after UV-ozone cleaning

Creators

  • 1. Kujbyshevskij Gosudarstvennyj Univ., Kuibyshev (Russian Federation)

Description

Variation of chemical composition of GaAs, InSb and Si monocrystal substrate surface layers at cleaning under UV-radiation effect in oxygen is studied. Layer thicknesses are estimated and element relations in layers are calculated using gualitative method for analysis of Auger spectroscopy data on lamellar structures. UV-ozone cleaning is shown to enable to reduce oxygen content at semiconductor surface by 2-4 times. 7 refs.; 2 tabs

Additional details

Additional titles

Original title (Russian)
Использование оже-спектроскопии для анализа состава поверхности полупроводников после УФ-озоновой очистки

Publishing Information

Journal Title
Poverkhnost': Fizika, Khimiya, Mekhanika
Journal Issue
no.4
Journal Page Range
p. 41-44.
ISSN
0207-3528
CODEN
PFKMDJ

INIS

Country of Publication
Russian Federation
Country of Input or Organization
Russian Federation
INIS RN
26075540
Subject category
S37: INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY;
Descriptors DEI
AUGER ELECTRON SPECTROSCOPY; INDIUM ANTIMONIDES; LAYERS; MONOCRYSTALS; OZONE; QUANTITATIVE CHEMICAL ANALYSIS; SUBSTRATES; SURFACE TREATMENTS; ULTRAVIOLET RADIATION; WIDTH
Descriptors DEC
ANTIMONIDES; ANTIMONY COMPOUNDS; CHEMICAL ANALYSIS; CRYSTALS; DIMENSIONS; ELECTROMAGNETIC RADIATION; ELECTRON SPECTROSCOPY; INDIUM COMPOUNDS; PNICTIDES; RADIATIONS; SPECTROSCOPY