Published 1987
| Version v1
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Use of a bent silicon crystal for deflection and formation of a proton beam with 8.9 GeV/c momentum
Creators
- 1. Moskovskij Gosudarstvennyj Univ. (USSR). Nauchno-Issledovatel'skij Inst. Yadernoj Fiziki
Description
The deflecting properties of a bent silicon crystal by the planar channeling have been studied with the help of a one-shoulder magnetic spectrometer. The crystal has been used for the formation of a proton beam with a 8.9 GeV/c momentum
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Additional details
Additional titles
- Original title (Russian)
- Использование изогнутого монокристалла кремния для отклонения и формирования пучка протонов с импульсом 8,9 GehV/c
Publishing Information
- Imprint Pagination
- 7 p.
- Report number
- JINR-R--1-87-653
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 19064678
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S74: ATOMIC AND MOLECULAR PHYSICS;
- Descriptors DEI
- ANGULAR DISTRIBUTION; BEAM PRODUCTION; BENDING; GEV RANGE 01-10; MONOCRYSTALS; ORIENTATION; PROTON CHANNELING; SILICON
- Descriptors DEC
- CHANNELING; CRYSTALS; DEFORMATION; DISTRIBUTION; ELEMENTS; ENERGY RANGE; GEV RANGE; SEMIMETALS
Optional Information
- Notes
- 12 refs.; 5 figs.; submitted to the journal Zh. Tekh. Fiz.