Published November 16, 1979 | Version v1
Journal article Metadata-only

Boron diffusion from a reactively sputtered glass source in Si and SiO2

Creators

  • 1. AN Gruzinskoj SSR, Tbilisi. Inst. Kibernetiki

Description

The reactive plasma sputtering technique is used to obtain a boron diffusion source in the form of borosilicate glass (BSG). Physical and chemical properties of the BSG films are investigated. Diffusion parameters of B in Si and SiO2 are obtained in the temperature range between 950 and 1200 0C. (author)

Additional details

Publishing Information

Journal Title
Phys. Status Solidi A
Journal Volume
56
Journal Issue
1
Series
Phys. Status Solidi A.
Journal Page Range
27-35
ISSN
0031-8965

INIS

Country of Publication
Germany
Country of Input or Organization
German Democratic Republic
INIS RN
11532746
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Numerical Data
Descriptors DEI
AMORPHOUS STATE; BORON; BORON SILICATES; DEPTH; DIFFUSION; ELECTRIC CONDUCTIVITY; ETCHING; EXPERIMENTAL DATA; FILMS; GLASS; INFRARED SPECTRA; ISOLATED VALUES; OXYGEN; QUANTITY RATIO; SILICON; SILICON OXIDES; SPATIAL DISTRIBUTION; SPUTTERING; TEMPERATURE DEPENDENCE; VERY HIGH TEMPERATURE
Descriptors DEC
BORON COMPOUNDS; CHALCOGENIDES; DATA; DATA FORMS; DIMENSIONS; DISTRIBUTION; ELECTRICAL PROPERTIES; ELEMENTS; INFORMATION; NONMETALS; NUMERICAL DATA; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; SEMIMETALS; SILICATES; SILICON COMPOUNDS; SPECTRA; SURFACE FINISHING