Published June 1996 | Version v1
Journal article Metadata-only

Microstructure of indium and gallium selenides and germanium arsenides

Creators

  • 1. Voronezhskij Gosudarstvennyj Univ., Voronezh (Russian Federation)

Description

Microstructure of chipped surface of certain lamellar semiconductor monocrystals revealed by selective chemical etching has been studied. The effect of accelerated dissolution of GaSe and InSe lithium intercalates as compared with pure selenides is pointed out. The density of etching figures in the semiconductors considered has been defined. Refs. 4, figs. 3

Additional details

Additional titles

Original title (Russian)
Исследование микроструктуры монокристаллов селенидов индия и галлия и арсенидов германия

Publishing Information

Journal Title
Neorganicheskie Materialy
Journal Volume
32
Journal Issue
6
Journal Page Range
p. 664-666.
ISSN
0002-337X
CODEN
NEOMB8

INIS

Country of Publication
Russian Federation
Country of Input or Organization
Russian Federation
INIS RN
28041127
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
DENSITY; ETCHING; INDIUM SELENIDES; LAYERS; LITHIUM ADDITIONS; MICROSTRUCTURE; MONOCRYSTALS; SEMICONDUCTOR MATERIALS
Descriptors DEC
CHALCOGENIDES; CRYSTAL STRUCTURE; CRYSTALS; INDIUM COMPOUNDS; MATERIALS; PHYSICAL PROPERTIES; SELENIDES; SELENIUM COMPOUNDS