Electrodeposition and characterization of Fe doped CdSe thin films from aqueous solution
- 1. Department of Physics, Alagappa University, Karaikudi-630 003 (India)
- 2. Centro de Investigacion y de Estudios Avanzados del I.P.N.(CINVESTAV), Av. Instituto Politecnico, Nacional 2508, Col. San Pedro Zacatenco, 07360, Mexico D.F (Mexico)
- 3. Millimeter-wave Innovation Technology Research Center, Dongguk University, Seoul- 100 715 (Korea, Republic of)
Description
Thin films of Cadmium selenide (CdSe) and Ferrous (Fe) doped Cadmium selenide (CdSe:Fe) have been deposited on indium doped tin oxide coated conducting glass (ITO) substrates using potentiostatic electrodeposition technique.The mechanism of formation of CdSe and CdSe:Fe have been analyzed in the potential range between -1500 and +1500 mV versus SCE. X-ray diffraction pattern reveals that the deposited films possess hexagonal structure with preferential orientation along (002) plane. The dependency of microstructural parameters such as crystallite size, strain and dislocation density with FeSO4 concentration for CdSe:Fe thin films are studied. Surface morphology and film composition shows that films with smooth surface and well defined stoichiometry is obtained at 0.01 M dopant (FeSO4) concentration. Optical parameters such as band gap, refractive index and extinction coefficient for CdSe and CdSe:Fe thin films are estimated using optical absorption measurements. Photoelectrochemical solar cells are constructed using CdSe and CdSe:Fe as photocathode in 1 M each of Na2S, S and NaOH as redox electrolyte and their power output characteristics are studied.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.mseb.2010.03.054Additional details
Identifiers
- DOI
- 10.1016/j.mseb.2010.03.054;
- PII
- S0921-5107(10)00209-6;
Publishing Information
- Journal Title
- Materials Science and Engineering. B, Solid-State Materials for Advanced Technology
- Journal Volume
- 174
- Journal Issue
- 1-3
- Journal Page Range
- p. 242-248
- ISSN
- 0921-5107
- CODEN
- MSBTEK
Conference
- Title
- 18. international materials research congress: Symposium on advances in semiconducting materials
- Acronym
- IMRC 2009
- Dates
- 16-20 Aug 2009
- Place
- Cancun (Mexico)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43030472
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ABSORPTION; AQUEOUS SOLUTIONS; CADMIUM; CADMIUM SELENIDES; DISLOCATIONS; DOPED MATERIALS; ELECTRODEPOSITION; ELECTROLYTES; IRON SULFATES; MICROSTRUCTURE; MORPHOLOGY; PHOTOCATHODES; REFRACTIVE INDEX; SOLAR CELLS; STRAINS; SUBSTRATES; SURFACES; THIN FILMS; TIN OXIDES; X-RAY DIFFRACTION
- Descriptors DEC
- CADMIUM COMPOUNDS; CATHODES; CHALCOGENIDES; COHERENT SCATTERING; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DEPOSITION; DIFFRACTION; DIRECT ENERGY CONVERTERS; DISPERSIONS; ELECTRODES; ELECTROLYSIS; ELEMENTS; EQUIPMENT; FILMS; HOMOGENEOUS MIXTURES; IRON COMPOUNDS; LINE DEFECTS; LYSIS; MATERIALS; METALS; MIXTURES; OPTICAL PROPERTIES; OXIDES; OXYGEN COMPOUNDS; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; PHYSICAL PROPERTIES; SCATTERING; SELENIDES; SELENIUM COMPOUNDS; SOLAR EQUIPMENT; SOLUTIONS; SORPTION; SULFATES; SULFUR COMPOUNDS; SURFACE COATING; TIN COMPOUNDS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2010 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.