Ellipsometric and channelling studies on ion-implanted silicon

RBS and ellipsometric investigations were combined to separate the contribution of radiation damage and overlayer contamination. It is pointed out that disorder effects which were produced by silicon self-implantation are shielded without proper surface cleaning. For cleaning, plasma stripping proved to be an effective method. The change in the psi parameter could be correlated with the degree of amorphousness. It seems that the Δ parameter feels the crystalline-amorphous phase transition for low-dose 31P+ and 27Al+ implants. No clear evidence was found for impurity effects for high-dose 75As+ and 31P+ implants. (orig.)