Published 1973
| Version v1
Book
The study of defect formation in ion-implanted silicon
- 1. AN SSSR, Novosibirsk. Inst. Fiziki Poluprovodnikov
Description
no abstract available
Additional details
Publishing Information
- Publisher
- Institute of Physics.
- Imprint Place
- London
- ISBN
- 0854981063
- Imprint Title
- Radiation damage and defects in semiconductors
- Imprint Pagination
- p. 72-80.
- Journal Issue
- no. 16
- Series
- Conference series.
Conference
- Title
- International conference on radiation damage and defects in semiconductors.
- Dates
- 19 Jul 1972.
- Place
- Reading, UK.
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 4065284
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- AMORPHOUS STATE; ANNEALING; ARGON IONS; BORON IONS; CATIONS; ENERGY; GYROMAGNETIC RATIO; IMPURITIES; INTERACTIONS; ION IMPLANTATION; ORDER-DISORDER TRANSFORMATIONS; PARAMAGNETISM; PHOSPHORUS IONS; RADIATION DOSES; RADIATION EFFECTS; SEMICONDUCTOR MATERIALS; SILICON; TEMPERATURE DEPENDENCE; V CENTERS
- Descriptors DEC
- CHARGED PARTICLES; COLOR CENTERS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELEMENTS; HEAT TREATMENTS; IONS; MAGNETISM; PHASE TRANSFORMATIONS; POINT DEFECTS; SEMIMETALS; VACANCIES