On temperature dependence of electrical resistivity of heavy-fermion systems

A nonmagnetic mechanism for a nonlinear temperature dependence of resistivity is proposed, based on the two-band model of heavy-fermion system (HF S). Its essence is the competition between the temperature growth of the intensity of electron-phonon scattering and the lessening of the carriers' effective mass on the Fermi surface due to a strong temperature dependence of the chemical potential. Depending on the system parameters (narrow band width, interband hybridization potential, Fermi level position, intensity of electron-phonon and electron-impurity interaction), the main types of the experimental ρ(T) curves are qualitatively restored