Probing of local electron states by laser terahertz radiation in PbTe(Ga)
Creators
- 1. Faculty of Physics, M.V. Lomonosov Moscow State University, Moscow 119991 (Russian Federation)
- 2. Faculty of Chemistry, M.V. Lomonosov Moscow State University, Moscow 119991 (Russian Federation)
- 3. Faculty of Physics, University of Regensburg, Regensburg D-93040 (Germany)
- 4. Institute of Applied Physics, Kishinev MD-2028, Republic of Moldova (Moldova, Republic of)
- 5. P.N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow 119991 (Russian Federation)
Description
Highlights: • We report on unusual photoconductivity under terahertz laser pulses in PbTe(Ga). • The kinetics and the sign of the photosignal depend on the photoexcitation level. • This is due to formation of local states in the vicinity of the quasi-Fermi level. • These local electron states may lie only on the background of an allowed energy band. - Abstract: We report on unusual photoconductivity under the action of strong terahertz laser pulses in PbTe(Ga) single crystals at low temperatures. The character and even the sign on the photosignal depends on the level of photoexcitation: the photoconductivity is positive and persistent at high degrees of excitation, whereas it is negative and non-persistent at low levels of excitation. We show that this non-trivial photoelectric behaviour is due to formation of local electron states in the close vicinity of the quasi-Fermi level. These local states may be formed only when the quasi-Fermi level lies on the background of an allowed energy band with a relatively high density of states
Availability note (English)
Available from http://dx.doi.org/10.1016/j.jallcom.2014.06.066Additional details
Identifiers
- DOI
- 10.1016/j.jallcom.2014.06.066;
- PII
- S0925-8388(14)01411-X;
Publishing Information
- Journal Title
- Journal of Alloys and Compounds
- Journal Volume
- 615
- Journal Page Range
- p. 375-377
- ISSN
- 0925-8388
- CODEN
- JALCEU
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 47008438
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- DOPED MATERIALS; EXCITATION; FERMI LEVEL; GALLIUM ADDITIONS; LASERS; LEAD COMPOUNDS; LEAD TELLURIDES; MONOCRYSTALS; PHOTOCONDUCTIVITY; PULSES
- Descriptors DEC
- ALLOYS; CHALCOGENIDES; CRYSTALS; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ENERGY LEVELS; ENERGY-LEVEL TRANSITIONS; GALLIUM ALLOYS; LEAD COMPOUNDS; MATERIALS; PHYSICAL PROPERTIES; TELLURIDES; TELLURIUM COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2014 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.