Single-Fundamental-Mode 850 nm Surface Relief VCSEL
Creators
- 1. Key Laboratory of Opto-electronics Technology (Ministry of Education), Beijing University of Technology, Beijing 100124 (China)
Description
The performance of the oxide-confined surface-relief (SR) structure vertical-cavity surface-emitting laser (VCSEL) is simulated and analyzed by using the three-dimensional finite-difference time-domain (FDTD) method. The impacts of the device structure parameters on the far-field characteristics are researched. A single-fundamental-mode SR VCSEL with an oxide-aperture of 15 μm is designed and produced. The single-mode power of the VCSEL is 5mW, the threshold current is 2.5 mA, far-field divergent angles range from 7.8° to 10.8° and the side-mode suppression ratio is over 30 dB. The optical and electrical properties of the device are in agreement with the results of FDTD simulation, which shows that the SR technology can effectively suppress the higher-order-mode lasing, and make the SR VCSEL work in a single mode under a larger oxide aperture. (fundamental areas of phenomenology(including applications))
Availability note (English)
Available from http://dx.doi.org/10.1088/0256-307X/29/8/084208Additional details
Identifiers
Publishing Information
- Journal Title
- Chinese Physics Letters
- Journal Volume
- 29
- Journal Issue
- 8
- Journal Page Range
- [5 p.]
- ISSN
- 0256-307X
- CODEN
- CPLEEU
INIS
- Country of Publication
- China
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45003509
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- APERTURES; COMPUTERIZED SIMULATION; DESIGN; ELECTRICAL PROPERTIES; FINITE DIFFERENCE METHOD; LASER CAVITIES; OXIDES; PERFORMANCE; SOLID STATE LASERS; SURFACES; THREE-DIMENSIONAL CALCULATIONS; THRESHOLD CURRENT
- Descriptors DEC
- CALCULATION METHODS; CHALCOGENIDES; CURRENTS; ELECTRIC CURRENTS; ITERATIVE METHODS; LASERS; MATHEMATICAL SOLUTIONS; NUMERICAL SOLUTION; OPENINGS; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; SIMULATION