Published November 1996 | Version v1
Journal article

Low- or high-angle Ar ion-beam etching to create ramp-type Josephson junctions

  • 1. EMAT, University of Antwerp (RUCA), Groenenborgerlaan 171, B-2020 Antwerp (Belgium)
  • 2. Department of Applied Physics, University of Twente, PO Box 217, 7500 AE Enschede (Netherlands)

Description

The dependence of the ramp geometry on high- or low-angle ion-beam etching, used to structure ramp-type Josephson junctions based on ReBa2Cu3O7-δ high-Tc superconductors, is investigated by cross-section transmission electron microscopy. The surface quality, interfaces and crystal defects are analysed by high-resolution electron microscopy. Technical difficulties to reproducibly obtain the desired slope angle and shape make high-angle ion-beam etching less interesting although the surface quality is comparable and no systematic differences in electrical properties are observed. (author)

Availability note (English)

Available online at the Web site for the journal Superconductor Science and Technology (ISSN 1361-6668) http://www.iop/org/

Additional details

Identifiers

Publishing Information

Journal Title
Superconductor Science and Technology
Journal Volume
9
Journal Issue
11
Journal Page Range
p. 978-984
ISSN
0953-2048