Published 1986
| Version v1
Journal article
Electronic structure and positron states at vacancies in semiconductors
Description
The self-consistent electron structures of the perfect Si, GaAs, and CdTe lattices are calculated by the linear-muffin-tin-orbital-band-structure method within the atomic-sphere approximation. Monovacancies in different charge states are treated by the corresponding Green's-function method. Positron states are determined by the same methods and positron annihilation characteristics are calculated. The results are compared with recent experiments. (author) 2 figs., 2 tabs., 15 refs
Additional details
Publishing Information
- Journal Title
- Materials Science Forum
- Journal Volume
- 10-12
- Journal Issue
- pt.1
- Series
- Mater. Sci. Forum.
- Journal Page Range
- 277-282
- ISSN
- 0255-5476
- CODEN
- MSFOE
INIS
- Country of Publication
- Switzerland
- Country of Input or Organization
- Switzerland
- INIS RN
- 23013570
- Subject category
- S74: ATOMIC AND MOLECULAR PHYSICS;
- Resource subtype / Literary indicator
- Numerical Data
- Descriptors DEI
- ANNIHILATION; CADMIUM TELLURIDES; CRYSTAL LATTICES; ELECTRONS; EXPERIMENTAL DATA; GALLIUM ARSENIDES; POSITRONS; SELF-CONSISTENT FIELD; SILICON; THEORETICAL DATA
- Descriptors DEC
- ANTILEPTONS; ANTIMATTER; ANTIPARTICLES; ARSENIC COMPOUNDS; ARSENIDES; CADMIUM COMPOUNDS; CHALCOGENIDES; CRYSTAL STRUCTURE; DATA; ELEMENTARY PARTICLES; ELEMENTS; FERMIONS; GALLIUM COMPOUNDS; INFORMATION; INTERACTIONS; LEPTONS; MATTER; NUMERICAL DATA; PARTICLE INTERACTIONS; PNICTIDES; SEMIMETALS; TELLURIDES; TELLURIUM COMPOUNDS