Published March 2012
| Version v1
Journal article
On impedance spectroscopy analysis of nonideal heterojunctions
Creators
- 1. Frantsevich Institute for Problems of Materials Science, NAS of Ukraine, Chernivtsi Branch, 58001, Iryna Vilde str. 5, Chernivtsi (Ukraine)
Description
A quantitative analysis of the impedance of nonideal heterojunctions was carried out taking into consideration the effects of series resistance, shunt resistance, parasitic inductance and electrically active interface traps. A new approach is proposed to determine the energy distribution of surface state density and to calculate the actual value of barrier capacitance of heterojunctions on the basis of the analysis of their complex impedance–voltage characteristics. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/0268-1242/27/3/035024Additional details
Identifiers
Publishing Information
- Journal Title
- Semiconductor Science and Technology
- Journal Volume
- 27
- Journal Issue
- 3
- Journal Page Range
- [7 p.]
- ISSN
- 0268-1242
- CODEN
- SSTEET
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45014313
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ENERGY SPECTRA; HETEROJUNCTIONS; SPECTROSCOPY; SURFACES
- Descriptors DEC
- SEMICONDUCTOR JUNCTIONS; SPECTRA