Published March 2012 | Version v1
Journal article

On impedance spectroscopy analysis of nonideal heterojunctions

Creators

  • 1. Frantsevich Institute for Problems of Materials Science, NAS of Ukraine, Chernivtsi Branch, 58001, Iryna Vilde str. 5, Chernivtsi (Ukraine)

Description

A quantitative analysis of the impedance of nonideal heterojunctions was carried out taking into consideration the effects of series resistance, shunt resistance, parasitic inductance and electrically active interface traps. A new approach is proposed to determine the energy distribution of surface state density and to calculate the actual value of barrier capacitance of heterojunctions on the basis of the analysis of their complex impedance–voltage characteristics. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/0268-1242/27/3/035024

Additional details

Publishing Information

Journal Title
Semiconductor Science and Technology
Journal Volume
27
Journal Issue
3
Journal Page Range
[7 p.]
ISSN
0268-1242
CODEN
SSTEET

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
45014313
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ENERGY SPECTRA; HETEROJUNCTIONS; SPECTROSCOPY; SURFACES
Descriptors DEC
SEMICONDUCTOR JUNCTIONS; SPECTRA