Published January 31, 2011 | Version v1
Journal article

X-ray study of gadolinium gallium garnet epitaxial layers containing divalent Co ions

  • 1. Institute of Electronic Materials Technology, 133 Wolczynska Str., 01-919 Warsaw (Poland)
  • 2. Institute of Experimental Physics, University of Warsaw, 69 Hoza Str., 00-681 Warsaw (Poland)
  • 3. Institute of Atomic Energy POLATOM, 05-400 Otwock- Swierk (Poland)
  • 4. Soltan Institute for Nuclear Studies, 05-400 Swierk/Otwock (Poland)

Description

Structural perfection of gadolinium gallium garnet (GGG; Gd3Ga5O12) epitaxial layers with incorporated divalent Co ions has been studied by means of high resolution X-ray diffraction, X-ray topography, transmission electron microscopy and optical spectroscopy. Epitaxial layers were grown by liquid phase epitaxy from super-cooled high temperature solution with different concentration of Co3O4 and GeO2 on both sides of the polished < 111> oriented GGG substrates. In order to facilitate incorporation of Co2+ ions into the garnet lattice optically inert Ge4+ ions have to be introduced first. High structural perfection is a prerequisite to obtain absorption spectra required for the use GGG epitaxial layers as tunable infrared absorbers.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.tsf.2010.10.046

Additional details

Identifiers

DOI
10.1016/j.tsf.2010.10.046;
PII
S0040-6090(10)01479-3;

Publishing Information

Journal Title
Thin Solid Films
Journal Volume
519
Journal Issue
7
Journal Page Range
p. 2111-2115
ISSN
0040-6090
CODEN
THSFAP

Optional Information

Copyright
Copyright (c) 2010 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.