Published March 28, 2013
| Version v1
Journal article
The influencing mechanism of modification layer on the performance of SiC3D/Al multi-function gradient composite
Creators
- 1. School of Materials Science and Engineering, Beijing Institute of Technology, 100081, Beijing (China)
Description
SiC skeleton surface was oxidized in this paper. Vacuum-pressure infiltration method is used to prepare SiC3D/Al composite. The effects of the thickness of the interface modification layer were investigated. The results showed that the thickness of SiO2 layer increases with the prolonged time of the skeleton oxidation. The brittle phase basically disappeared at the interface of the composite with 9 hours pre-oxidized, which lead to the high interface bonding strength. As a result, fracture morphology of the oxidized composite is mainly composed with plastic toughening of pure aluminum. Therefore, the static compressive strength of the composite raises up to 1165.2Mpa.
Availability note (English)
Available from http://dx.doi.org/10.1088/1742-6596/419/1/012016Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Physics. Conference Series (Online)
- Journal Volume
- 419
- Journal Issue
- 1
- Journal Page Range
- [6 p.]
- ISSN
- 1742-6596
Conference
- Title
- 12. international symposium on multiscale, multifunctional and functionally graded materials
- Acronym
- FGM 2012
- Dates
- 22 Oct 2012
- Place
- Beijing (China)
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 44068111
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ALUMINIUM; COMPRESSION STRENGTH; FRACTURES; INTERFACES; LAYERS; MODIFICATIONS; MORPHOLOGY; OXIDATION; PERFORMANCE; SILICON CARBIDES; SILICON OXIDES; SURFACES; THICKNESS
- Descriptors DEC
- CARBIDES; CARBON COMPOUNDS; CHALCOGENIDES; CHEMICAL REACTIONS; DIMENSIONS; ELEMENTS; FAILURES; MECHANICAL PROPERTIES; METALS; OXIDES; OXYGEN COMPOUNDS; SILICON COMPOUNDS