Short channel, low noise UHF MOS-FET's utilizing molybdenum-gate masked ion-implantation

A low noise high cutoff frequency dual-gate MOS-FET with a Mo-gate is fabricated using gate-masked ion-implantation. In the high frequency region, low noise performance is achieved with a short channel and minimum resistive parasitics such as gate and source resistances. To reduce the effect of the gate resistance, a new comb type structure with low resistive Mo film is realized. The dual-gate FET with a channel length of 1.3 μ as the 1st channel and 2.5 μ as the 2nd channel, a channel width of 1.2 mm and a gate oxide thickness of 600 A, was operated at 800 MHz with a minimum noise figure of 2.4 dB and a power gain of 19 dB. Good cross modulation characteristic was also confirmed. (auth.)