A new model for electromigration grain boundary noise based on free volume

Grain boundary plays a key role in electromigration process of polycrystal interconnection. We take a free volume to represent a 'vacancy–ion complex' as a function of grain boundary specific resistivity, and develop a new characterisation model for grain boundary noise. This model reveals the internal relation between the boundary scattering section and electromigration noise. Comparing the simulation result with our experimental result, we find the source as well as the form of noise change in the electromigration process. In order to describe the noise enhancement at grain boundary quantitatively, we propose a new parameter—grain boundary noise enhancement factor, which reflects that the grain boundary noise can characterise the electromigration damage sensitively. (condensed matter: electronic structure, electrical, magnetic, and optical properties)