Published March 31, 2011 | Version v1
Journal article

Laser deposition of large-area thin films

Description

A new method for fabricating large-area thin films of uniform thickness on a rotating substrate is proposed. Its distinctive features are (i) the presence of a diaphragm, partially transmitting the evaporated material, between the target and substrate and (ii) the translatory motion of the rotating substrate with respect to the target at a certain velocity. The method proposed makes it possible to obtain thin films of uniform thickness on substrates with sizes limited by only the deposition chamber size. The method is experimentally verified by depositing thin CuO films on silicon substrates placed over the radius of a disk 300 mm in diameter. The deviation of the film thickness from the average value does not exceed ±3% throughout the entire radius, which confirms good prospects of this method for microelectronics, optical industry, and other modern technologies. (laser technology)

Availability note (English)

Available from http://dx.doi.org/10.1070/QE2011v041n03ABEH014417

Additional details

Publishing Information

Journal Title
Quantum Electronics (Woodbury, N.Y.)
Journal Volume
41
Journal Issue
3
Journal Page Range
p. 253-256
ISSN
1063-7818

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
43023948
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
COPPER OXIDES; DEPOSITION; DIAPHRAGM; LASERS; MICROELECTRONICS; SILICON; SUBSTRATES; THICKNESS; THIN FILMS
Descriptors DEC
BODY; CHALCOGENIDES; COPPER COMPOUNDS; DIMENSIONS; ELEMENTS; FILMS; MUSCLES; ORGANS; OXIDES; OXYGEN COMPOUNDS; SEMIMETALS; TRANSITION ELEMENT COMPOUNDS