Published 1973
| Version v1
Report
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Investigating probability of production of gamma-radiation semiconductor detectors based on diffusive p-n junctions in cadmium telluride
Description
no abstract available
Availability note (English)
MF available from INIS under the Report Number.Files
5148939.pdf
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Additional details
Additional titles
- Original title (Russian)
- Исследование возможности создания полупроводниковых детекторов гамма-излучения на основе диффузионных п-н-переходов в теллуриде кадмия
Publishing Information
- Imprint Pagination
- 28 p.
- Report number
- IAE--2336
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 5148939
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- CADMIUM TELLURIDES; DATA; ENERGY RESOLUTION; GAMMA RADIATION; INDIUM; JUNCTION DETECTORS; PROBABILITY; THERMAL DIFFUSION
- Descriptors DEC
- CADMIUM COMPOUNDS; CHALCOGENIDES; ELECTROMAGNETIC RADIATION; ELEMENTS; INFORMATION; IONIZING RADIATIONS; MEASURING INSTRUMENTS; METALS; RADIATION DETECTORS; RADIATIONS; RESOLUTION; SEMICONDUCTOR DETECTORS; TELLURIDES; TELLURIUM COMPOUNDS
Optional Information
- Notes
- 24 refs.; 20 figs.; 3 tables.