Published May 13, 2016
| Version v1
Journal article
Emergence of ferroelectricity in antiferroelectric nanostructures
- 1. Department of Physics, University of South Florida, Tampa, Florida 33620 (United States)
Description
First-principles-based finite-temperature simulations are used to predict the emergence of ferroelectricity in antiferroelectric nanostructures made of PbZrO3. The phenomenon is expected to occur in antiferroelectric nanodots, nanowires, and thin films with good surface charge compensation and can be explained by the recently proposed surface effect [1]. Our computations provide a microscopic insight into the equilibrium phases, phase competition, and electrical properties of PbZrO3 nanostructures. The dependence of these properties on the electrical boundary conditions and nanostructure size is investigated. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/0957-4484/27/19/195705Additional details
Identifiers
Publishing Information
- Journal Title
- Nanotechnology (Print)
- Journal Volume
- 27
- Journal Issue
- 19
- Journal Page Range
- [7 p.]
- ISSN
- 0957-4484
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 48036827
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY; S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; S36: MATERIALS SCIENCE; S37: INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY;
- Descriptors DEI
- BOUNDARY CONDITIONS; CALCULATION METHODS; ELECTRICAL PROPERTIES; LEAD COMPOUNDS; NANOWIRES; QUANTUM DOTS; THIN FILMS; ZIRCONIUM OXIDES
- Descriptors DEC
- CHALCOGENIDES; FILMS; NANOSTRUCTURES; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; TRANSITION ELEMENT COMPOUNDS; ZIRCONIUM COMPOUNDS