Liquid flow deposited spinel (Ni,Mn)3O4 thin films for microbolometer applications
Creators
- 1. School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)
- 2. Intelligent Electronic Component Team, Electronic Materials Convergence Division, Korea Institute of Ceramic Engineering and Technology, Seoul 153-801 (Korea, Republic of)
Description
Highlights: • Highly quality (Ni,Mn)3O4 thin films were grown using liquid flow deposited (LFD) technique. • It is possible to deposit multi–component manganite–oxide thin films by LFD at low temperatures. • Nickel–manganite films showed a good negative temperature coefficient (NTC) characteristic. • Liquid flow deposited (Ni,Mn)3O4 thin films are very potential for microbolometer applications. - Abstract: A liquid flow deposition (LFD) technique was initially used for the fabrication of single-component Mn3O4 thin films onto Si wafer substrates at a range of substrate temperatures of 30–80 °C, with the introduction of an oxidizing reagent (H2O2). As a result, solid thin films were well formed from an aqueous solution. An X-ray diffraction (XRD) analysis showed typical characteristics of hausmannite Mn3O4 with a spinel tetragonal phase. Field-emission scanning electron microscopy (FE-SEM) observations revealed nano-sized grains arranged uniformly on a dense and smooth surface for all of the as-deposited films. On the other hand, the LFD method was then extended to prepare two-component nickel–manganite films according to the binary chemical composition of NixMn3−xO4 with x = 0.02–0.2. The as-grown nickel–manganite films showed a surface with a good quality with a spherical bead-like architecture when x ≤ 0.10, while a conversion from spherical grains into highly porous nanowalls in the microstructure was noted in films when x ≥ 0.12. These results signify that it is possible to fabricate various multi-component manganite-oxide thin films at a low temperature. In addition, the dependences of the room-temperature electrical resistivity (ρ) and the temperature coefficient of resistance (TCR) on the Ni substitution level (x) were investigated on films annealed at 400 °C
Availability note (English)
Available from http://dx.doi.org/10.1016/j.apsusc.2014.12.168Additional details
Identifiers
- DOI
- 10.1016/j.apsusc.2014.12.168;
- PII
- S0169-4332(14)02902-X;
Publishing Information
- Journal Title
- Applied Surface Science
- Journal Volume
- 330
- Journal Page Range
- p. 366-373
- ISSN
- 0169-4332
- CODEN
- ASUSEE
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 47033983
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANNEALING; AQUEOUS SOLUTIONS; BOLOMETERS; CRYSTALS; ELECTRIC CONDUCTIVITY; FIELD EMISSION; HYDROGEN PEROXIDE; LIQUID FLOW; MANGANESE OXIDES; MICROSTRUCTURE; NANOSTRUCTURES; NICKEL OXIDES; POROUS MATERIALS; SCANNING ELECTRON MICROSCOPY; SPINELS; SUBSTRATES; SURFACES; TEMPERATURE COEFFICIENT; THIN FILMS; X-RAY DIFFRACTION
- Descriptors DEC
- CHALCOGENIDES; COHERENT SCATTERING; DIFFRACTION; DISPERSIONS; ELECTRICAL PROPERTIES; ELECTRON MICROSCOPY; EMISSION; FILMS; FLUID FLOW; HEAT TREATMENTS; HOMOGENEOUS MIXTURES; HYDROGEN COMPOUNDS; MANGANESE COMPOUNDS; MATERIALS; MEASURING INSTRUMENTS; MICROSCOPY; MINERALS; MIXTURES; NICKEL COMPOUNDS; OXIDE MINERALS; OXIDES; OXYGEN COMPOUNDS; PEROXIDES; PHYSICAL PROPERTIES; REACTIVITY COEFFICIENTS; SCATTERING; SOLUTIONS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2015 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.