Application of helicon waves for contracthes local testing of homogeneity of certain narrow-band semiconductors according to density and mobility of free charge carriers

Application of practically the single contactless local method today for determination of concentration and charge carrier mobility in narrow-band semiconductors of the CdxHg1-xTe(x∼0.2) type using helicons-circulating polarized electromagnetic waves propagating in the magnetized plasma of free charge carriers along the external magnetic field, is described. An installation for local testing of concentration and charge carrier mobility in narrow-band semiconductors is constructed and it has been used to study homogeneity of ternary CdxHg1-xTe solid solution samples of the n-type of conductivity at 77 K. This installation is shown to allow to carry out contactless expressive measurements of electrical properties of CdxHg1-xTe of n-type conductivity of high accuracy and locality, that gives the possibility to use it for testing material prepared in industry