Conditions for oriented crystallization of vapor deposited HgTe

Conditions essential for the formation of HgTe epitaxial films on CdTe substrates and mica on precipitation from a vapour-gas phase were studied. It was demonstrated that homogeneous epitaxial layers might be obtained only in a sufficiently narrow temperature range 460-370 deg C at high cooling rates of the vapour-gas phase (approximately 30 degree/s). In order to produce the required electrical - physical parameters of the epitaxial layers, the ratio of the partial prassure of mercury to the partial pressure of tellurium in the crystallization zone should be very high (Psub(Hg)/Psub(Tesub(2)) approximately 3000)