Published January 2008 | Version v1
Journal article Metadata-only

MICROSTRUCTURE AND THERMOELECTRICAL PROPERTIES OF COMPLEX-DOPED Si0,85Ge0,15 ALLOYS

Creators

  • 1. Ferdinand Tavadze Institute of Metallurgy and Materials Science, Tbilisi (Georgia)
  • 2. Ilia Vekua Sukhumi Institute of Physics and Technology (Georgia)

Description

Microstructure, microhardness, phase composition and thermoelectrical properties of complex-doped polycrystalline Si-Ge alloys obtained by Czochralski method were studied. The determining role of the real structure state, the interactions and the thermal stability of defects for the structural-sensitive characteristics of Si-Ge alloys was analyzed. (author)

Additional details

Publishing Information

Journal Title
Georgian Engineering News (GEN)
Journal Issue
n.1,2008
Journal Page Range
p. 47-51
ISSN
1512-0287

INIS

Country of Publication
Georgia
Country of Input or Organization
Georgia
INIS RN
48066178
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
COMPLEXES; CZOCHRALSKI METHOD; DEFECTS; DOPED MATERIALS; GALLIUM PHOSPHIDES; GERMANIUM ALLOYS; INTERACTIONS; MICROHARDNESS; MICROSTRUCTURE; POLYCRYSTALS; SILICON ALLOYS; STABILITY
Descriptors DEC
ALLOYS; CRYSTAL GROWTH METHODS; CRYSTALS; GALLIUM COMPOUNDS; HARDNESS; MATERIALS; MECHANICAL PROPERTIES; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES

Optional Information

Notes
8 refs., 2 figs., 2 tabs.