Published February 15, 2012 | Version v1
Journal article

Mesoporous sol-gel deposited SiO2-SnO2 nanocomposite thin films

  • 1. St. Petersburg State Electrotechnical University (LETI), 197376 St. Petersburg (Russian Federation)
  • 2. TU Dresden Solid State Electronics Laboratory, 01062 Dresden (Germany)

Description

Nanocomposite SiO2-SnO2 thin films were prepared on oxidized silicon substrates using the sol-gel technique with SnCl2·2H2O as a tin precursor and tetraethylorthosilicate (TEOS) as a silica source. The porous structure of the films was investigated by atomic force microscope. Gas sensitivity of the samples was measured at different temperatures and for different H2 concentrations. Advanced gas sensing properties were obtained for a silica fraction of 10 at% providing a mesoporous microstructure.

Availability note (English)

Available from http://dx.doi.org/10.1088/1757-899X/30/1/012003

Additional details

Publishing Information

Journal Title
IOP Conference Series. Materials Science and Engineering (Online)
Journal Volume
30
Journal Issue
1
Journal Page Range
[5 p.]
ISSN
1757-899X

Conference

Title
Solution-derived electronic-oxide films, nanostructures and patterning, from materials to devices
Acronym
E-MRS 2011 fall Symposium K
Dates
19-23 Sep 2011
Place
Warsaw (Poland)

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
43100972
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ATOMIC FORCE MICROSCOPY; HYDROGEN; MICROSTRUCTURE; NANOSTRUCTURES; POROUS MATERIALS; PRECURSOR; SENSITIVITY; SILICA; SILICON; SILICON OXIDES; SOL-GEL PROCESS; THIN FILMS; TIN CHLORIDES; TIN OXIDES
Descriptors DEC
CHALCOGENIDES; CHLORIDES; CHLORINE COMPOUNDS; ELEMENTS; FILMS; HALIDES; HALOGEN COMPOUNDS; MATERIALS; MICROSCOPY; MINERALS; NONMETALS; OXIDE MINERALS; OXIDES; OXYGEN COMPOUNDS; SEMIMETALS; SILICON COMPOUNDS; TIN COMPOUNDS; TIN HALIDES