Published July 11, 2012
| Version v1
Journal article
In situ ALD experiments with synchrotron radiation photoelectron spectroscopy
Creators
- 1. Brandenburg University of Technology, Konrad-Wachsmann-Allee 17, 03046 Cottbus (Germany)
Description
In this contribution, we describe some features of atomic layer deposition (ALD) investigated by means of synchrotron radiation photoelemission spectroscopy (SR-PES). In particular, we show how the surface sensitivity of SR-PES combined with the in situ nature of our investigations can point out interactions between the substrate and ALD precursors. We observed changes on all substrates investigated, included Si, GaAs, Ru and their surface oxides. These interactions are extremely important during the first ALD cycles and induce modifications in the substrate, which might lead to its functionality enhancement. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/0268-1242/27/7/074010Additional details
Identifiers
Publishing Information
- Journal Title
- Semiconductor Science and Technology
- Journal Volume
- 27
- Journal Issue
- 7
- Journal Page Range
- [9 p.]
- ISSN
- 0268-1242
- CODEN
- SSTEET
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45014162
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- GALLIUM ARSENIDES; INTERACTIONS; OXIDES; PHOTOELECTRON SPECTROSCOPY; SENSITIVITY; SUBSTRATES; SURFACES; SYNCHROTRON RADIATION
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; BREMSSTRAHLUNG; CHALCOGENIDES; ELECTROMAGNETIC RADIATION; ELECTRON SPECTROSCOPY; GALLIUM COMPOUNDS; OXYGEN COMPOUNDS; PNICTIDES; RADIATIONS; SPECTROSCOPY