Published July 1987
| Version v1
Journal article
Photoconductivity of a-Si1-x Gex: H and a-Si1-x Nx: H semiconductor alloys deposited by R.F. sputtering
- 1. Universidade Estadual de Campinas (Brazil)
Description
no abstract available
Additional details
Additional titles
- Original title (Portuguese)
- Fotocondutividade de ligas semicondutoras a-Si
Publishing Information
- Journal Title
- Cienc. Cult. (Sao Paulo) Supl.
- Journal Volume
- 39
- Journal Issue
- 7
- Series
- Cienc. Cult. (Sao Paulo) Supl.
- Journal Page Range
- 237
- ISSN
- 0102-2474
- CODEN
- RRACD
Conference
- Title
- 39. Annual Meeting of the Brazilian Society for the Advancement of Science.
- Dates
- 12-18 Jul 1987.
- Place
- Brasilia, DF (Brazil).
INIS
- Country of Publication
- Brazil
- Country of Input or Organization
- Brazil
- INIS RN
- 18077666
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- ALLOYS; DEPOSITION; GERMANIUM SILICATES; HYDROGEN IONS; MEDIUM TEMPERATURE; PHOTOCONDUCTIVITY; SAMPLE PREPARATION; SEMICONDUCTOR MATERIALS; SILICON NITRIDES; SPUTTERING
- Descriptors DEC
- CHARGED PARTICLES; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; GERMANIUM COMPOUNDS; IONS; MATERIALS; NITRIDES; NITROGEN COMPOUNDS; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; SILICATES; SILICON COMPOUNDS
Optional Information
- Notes
- Published in summary form only.