Published May 25, 2003 | Version v1
Journal article

Study on the thermal conductivity and microstructure of silicon nitride used for power electronic substrate

Description

The thermal conductivity and microstructure of Si3N4 ceramics used for power electronic substrate were studied in present paper. Thermal conductivity of Si3N4 ceramics sintered at different temperatures varied greatly. The microstructure of the specimens was studied with X-ray diffraction, EDS and transmission electronic microscope to reveal the difference in thermal conductivity. The experimental results showed that microstructure of Si3N4 ceramics sintered at different temperatures had different components in their grain phase and grain boundary phase, while electrical properties showed not much difference with different sintering temperatures

Additional details

Identifiers

DOI
10.1016/S0921-5107;
PII
S092151070200483X;

Publishing Information

Journal Title
Materials Science and Engineering. B, Solid-State Materials for Advanced Technology
Journal Volume
99
Journal Issue
1-3
Journal Page Range
p. 475-478
ISSN
0921-5107
CODEN
MSBTEK

Conference

Title
8. IUMRS international conference on electronic materials
Acronym
IUMRS-ICEM2002
Dates
10-14 Jun 2002
Place
Xi'an (China)

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
37046216
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
CERAMICS; ELECTRICAL PROPERTIES; GRAIN BOUNDARIES; SILICON NITRIDES; SINTERING; SUBSTRATES; TEMPERATURE DEPENDENCE; THERMAL CONDUCTIVITY; X-RAY DIFFRACTION
Descriptors DEC
COHERENT SCATTERING; DIFFRACTION; FABRICATION; MICROSTRUCTURE; NITRIDES; NITROGEN COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; SCATTERING; SILICON COMPOUNDS; THERMODYNAMIC PROPERTIES

Optional Information

Copyright
Copyright (c) 2002 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.