On the theory of Nernst–Ettingshausen oscillations in monolayer and bilayer graphene

The Landau levels in graphene in crossed magnetic and electric fields are dependent on the electric field. However, this effect is not taken into account in many theoretical studies of graphene in crossed fields. In particular, it is not considered in the Nernst–Ettingshausen effect, in which the regime of crossed fields is realized. In this Letter, we considered the Nernst–Ettingshausen effect in monolayer and bilayer graphene, taking into account the dependence of Landau levels on the electric field. We showed that the magnitude and period of the Nernst coefficient oscillations depend on the electric field. This fact is important for the fundamental theory of Nernst–Ettingshausen effect in graphene and gives the new possibility for control of this effect using an applied electric field. The latter is very interesting for practical applications