Electronic structure of spinel-type MgTi2O4. Valence change at surface and effect of Fe substitution for Mg
- 1. Waseda University, School of Advanced Science and Engineering, Department of Applied Physics, Tokyo (Japan)
- 2. University of Hyogo, Graduate School of Material Science, Kamigori, Hyogo (Japan)
Description
Bulk and surface electronic states of MgTi2O4 have been investigated by means of x-ray absorption spectroscopy (XAS), hard x-ray photoemission spectroscopy (HAXPES), and theoretical calculations. The Ti 2p XAS spectra exhibit multiplet structures derived from the bulk Ti3+ and surface Ti4+ features. In the surface sensitive O 1s XAS of the total electron yield mode, the magnitude of ligand field splitting is enhanced due to existence of surface Ti4+ species. The bulk-sensitive O 1s XAS spectrum taken in the total fluorescence yield mode is well reproduced by unoccupied part of O 2p density of states obtained by band structure calculations with on-site Coulomb interaction U for Ti 3d. In addition, occupied part of the calculated Ti 3d density of states agrees with the hard x-ray photoemission spectrum indicating Mottness of Ti 3d electrons. In Mg1-xFexTi2O4, the bulk sensitive Fe 2p XAS is consistent with high spin Fe2+ indicating isovalent substitution for Mg while the surface sensitive Fe 2p XAS includes high spin Fe3+. The multiplet structures in the Ti 2p and Fe 2p XAS spectra show that the 3d electrons in the bulk Ti3+ and Fe2+ are basically localized. On the other hand, a low energy shoulder of the Ti 2p HAXPES peak, which can be assigned to Ti2+ or screening effect, suggests charge fluctuation due to proximity to the metal-insulator transition. (author)
Availability note (English)
Available from DOI: https://doi.org/10.7566/JPSJ.91.074704Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of the Physical Society of Japan (Online)
- Journal Volume
- 91
- Journal Issue
- 7
- Journal Page Range
- p. 074704.1-074704.7
- ISSN
- 1347-4073
INIS
- Country of Publication
- Japan
- Country of Input or Organization
- Japan
- INIS RN
- 54016912
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- COULOMB FIELD; CRYSTAL LATTICES; CRYSTAL-PHASE TRANSFORMATIONS; DIMERIZATION; ELECTRIC CONDUCTIVITY; ELECTRICAL INSULATORS; ELECTRONIC STRUCTURE; ENERGY GAP; LIGANDS; MAGNESIUM COMPOUNDS; MATERIAL SUBSTITUTION; TITANIUM IONS; VALENCE; X-RAY PHOTOELECTRON SPECTROSCOPY
- Descriptors DEC
- ALKALINE EARTH METAL COMPOUNDS; CHARGED PARTICLES; CHEMICAL REACTIONS; CRYSTAL STRUCTURE; ELECTRIC FIELDS; ELECTRICAL EQUIPMENT; ELECTRICAL PROPERTIES; ELECTRON SPECTROSCOPY; EQUIPMENT; IONS; PHASE TRANSFORMATIONS; PHOTOELECTRON SPECTROSCOPY; PHYSICAL PROPERTIES; POLYMERIZATION; SPECTROSCOPY
Optional Information
- Notes
- 56 refs., 5 figs.