Published 1987 | Version v1
Book Metadata-only

Detection of light-induced defects in a-Si:H via electroreflection

Creators

  • 1. Hahn-Meitner-Institute, Berlin, West Germany

Description

p+-i-n+ a-Si:H samples have been investigated by the Back Surface Reflected Electroabsorption Method (BASREA) before and after extended illumination with laser light (514.5 nm, 0.5 W during 5 min.). Whereas the unexposed samples show the well-known electroabsorption (EA) feature centered at about 1.74 eV, the Ea signal of the light-soaked samples is characterized mainly by a strongly enhanced background and the appearance of two peaks at 1.70 eV and 1.78 eV. This splitting, which vanishes after annealing of the samples, is ascribed to a change of the density of states at the band tails due to light induced defects

Additional details

Publishing Information

Publisher
American Institute of Physics.
Imprint Place
New York, NY (USA)
Imprint Title
Stability of amorphous silicon alloy materials and devices
Journal Page Range
p. 78-81.

Conference

Title
International conference on stability of amorphous silicon alloy materials and devices.
Dates
28-30 Jan 1987.
Place
Palo Alto, CA (USA).

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
19021810
Subject category
S36: MATERIALS SCIENCE; S42: ENGINEERING;
Resource subtype / Literary indicator
Conference, Numerical Data
Descriptors DEI
ABSORPTION; AMORPHOUS STATE; ANNEALING; CRYSTAL DEFECTS; ELECTRONIC STRUCTURE; EXPERIMENTAL DATA; HYDROGENATION; LASER RADIATION; PHYSICAL RADIATION EFFECTS; REFLECTION; SEMICONDUCTOR DEVICES; SILICON; THIN FILMS; VISIBLE RADIATION
Descriptors DEC
CHEMICAL REACTIONS; CRYSTAL STRUCTURE; DATA; ELECTROMAGNETIC RADIATION; ELEMENTS; FILMS; HEAT TREATMENTS; INFORMATION; NUMERICAL DATA; RADIATION EFFECTS; RADIATIONS; SEMIMETALS