Published April 2016
| Version v1
Journal article
Recent progress of ultrahigh voltage SiC devices for particle accelerator
Creators
- 1. National Institute of Advanced Industrial Science and Technology (AIST), Advanced Power Electronics Research Center, Tsukuba, Ibaraki (Japan)
- 2. RIKEN, SPring-8 Center, Tokai, Ibaraki (Japan)
Description
Silicon carbide (SiC) is the promising material for next power electronics technology used in the field such as HEV, EV, and railway, electric power infrastructure. SiC enables power devices with low loss to easily operate in an ultrahigh-voltage region because of the high breakdown electric field of SiC. In this paper, we report static and dynamic electric performances of 3300 V class SiC SBDs, IE-MOSFETs, >10 kV PiN diodes and IE-IGBTs. Especially, the electrical characteristics of IE-IGBT with the blocking voltage of 16.5 kV indicate the sufficient ability to convert the thyratron in high power RF system of an accelerator. (author)
Additional details
Publishing Information
- Journal Title
- Kasokuki
- Journal Volume
- 13
- Journal Issue
- 1
- Journal Page Range
- p. 25-31
- ISSN
- 1349-3833
INIS
- Country of Publication
- Japan
- Country of Input or Organization
- Japan
- INIS RN
- 47114118
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ELECTRIC CONDUCTIVITY; ELECTRIC FIELDS; ELECTRICAL FAULTS; ELECTRON MOBILITY; ELECTRONIC EQUIPMENT; MOSFET; P-TYPE CONDUCTORS; SILICON CARBIDES; SILICON DIODES; SWITCHING DIODES; THERMAL CONDUCTIVITY; TOWNSEND DISCHARGE
- Descriptors DEC
- CARBIDES; CARBON COMPOUNDS; ELECTRIC DISCHARGES; ELECTRICAL PROPERTIES; EQUIPMENT; FIELD EFFECT TRANSISTORS; MATERIALS; MOBILITY; MOS TRANSISTORS; PARTICLE MOBILITY; PHYSICAL PROPERTIES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMICONDUCTOR MATERIALS; SILICON COMPOUNDS; THERMODYNAMIC PROPERTIES; TRANSISTORS
Optional Information
- Notes
- 4 refs., 19 figs., 2 tabs.