Ion beam synthesis of Co nanoparticles in SiO2: Monte Carlo simulation

Ion implantation is a well-established technique for synthesizing nanostructures and tools exist to determine the as-implanted depth profile. Knowledge of the size and depth distribution of the nanoclusters, however, requires a detailed modeling of the atomic displacements during the implantation stage. The Monte Carlo method can be used for this objective, and we have applied it to the case of Co nanoparticles in a SiO2 matrix. A description of a simulation procedure is given for this particular case. Results of the calculation are compared with experimental data