Optical manipulation of temperature formation of CuInSe2 thin films

Polycrystalline thin films of CuInSe2 were grown onto glass substrates using the stacked elemental layer (SEL) technique involving the annealing at different temperatures in air atmosphere for different times. The variation in the structure and optical properties of the CuInSe2 thin films on the annealing temperature and time was investigated using X-ray diffraction (XRD) and optical measurements, respectively. The different structural properties were clearly reflected in X-ray diffraction studies. It was concluded that CuInSe2 phase is dominated at annealing temperature of 300 deg. C for a time ≥1 h. Ternary phase of CuInSe2 was characterized by highly both transmission and absorption, optimization of the optical constants and band gap. Optical absorption studies indicate a direct band gap range around 1.0 eV. The data on structural and optical properties covering this technique will be presented