Published 1992 | Version v1
Miscellaneous Metadata-only

The effect of electron irradiation dose on the profile of the introduced defects in GaAs VPE layers

Creators

  • 1. TEI, Athens (Greece). Dept. of Physics, Chemistry and Materials Technology
  • 2. Magyar Tudomanyos Akademia, Budapest (Hungary). Mueszaki Fizikai Kutato Intezete
  • 3. Athens Univ. (Greece)
  • 4. Reading Univ. (United Kingdom)

Description

Abstract only

Part of:
12th general conference of the condensed matter division of the E.P.S. V.16A

Additional details

Publishing Information

Imprint Title
12th general conference of the condensed matter division of the E.P.S. V.16A.
Imprint Pagination
394 p.
Journal Page Range
p. 125.
Report number
INIS-mf--13336

Conference

Title
12. general conference of the condensed matter division.
Dates
6-9 Apr 1992.
Place
Prague (Czechoslovakia).

INIS

Country of Publication
Serbia and Montenegro
Country of Input or Organization
Serbia and Montenegro
INIS RN
23069403
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference, No Abstract
Descriptors DEI
CRYSTAL DEFECTS; ELECTRIC CONDUCTIVITY; ELECTRONS; GALLIUM ARSENIDES; IRRADIATION; PHYSICAL RADIATION EFFECTS; TEMPERATURE RANGE 0273-0400 K; TRAPS
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL STRUCTURE; ELECTRICAL PROPERTIES; ELEMENTARY PARTICLES; FERMIONS; GALLIUM COMPOUNDS; LEPTONS; PHYSICAL PROPERTIES; PNICTIDES; RADIATION EFFECTS; TEMPERATURE RANGE

Optional Information