Enhancing photo-detection properties of Sb_0.15Sn_0.85S₂ alloy

Alloy engineering is a potential technique in producing a high performance optoelectronic device. Single crystals of Sb_0.15Sn_0.85S₂ ternary alloys are grown by technique of direct vapour transport. As-grown crystals are used to fabricate metal-semiconductor-metal device for photodetection. The photodetector exhibits consistent performance and good reproducibility towards light. Moreover, it shows proficient sensitivity towards the bias voltages ranging from 5 V to 50 V under white light of 80 mW cm⁻² intensity. The detector is exploited for its photoresponse at a fixed intensity of 0.3 mW cm⁻² for different illumination wavelengths (480 nm, 570 nm and 670 nm) and thicknesses (20 μm, 15 μm and 11 μm). The results showed highest photo-response for 480 nm illumination. The present findings showed the detector demonstrated excellent performance under various illuminations at different bias voltages an essential need for high performance device. The study can provide innovative direction to future optoelectronics devices. (paper)