Department of Radiation Detectors: Overview

Full text: Work carried out in 1999 in the Department of Radiation Detectors concentrated on three subjects: (i) Semiconductor Detectors (ii) X-ray Tube Generators (iii) Material Modification Using Ion and Plasma Beams. SEMICONDUCTOR DETECTORS: Main objectives of the Department in this field were in 1999 accomplished particularly by research on: - charge amplification inside silicon detectors at high densities of ionization; - stabilization of surfaces of germanium and silicon detectors by means of sputtered protective coatings; -thermoelectrically-cooled silicon X-ray detectors (KBN grant); - silicon ΔE detectors for identification of heavy charged particles; - segmented silicon detectors for spectrometry of charged particles with GeV energies. In accomplishment of the above the Department cooperated with Institute of Physics PAN (Warsaw), and ITME (Warsaw). Some detectors and services have been delivered to customers on a commercial basis. X-RAY TUBE GENERATORS: The Department conducts research on design and technology of manufacturing X-ray generators as well a s on imaging and dosimetry of X-ray beams. In 1999 the work concentrated on: Laboratory set-up with CCD camera for imaging X-ray beams (phase II); ''Photon needle'' for radiotherapy (KBN grant). In accomplishment of the above the Department cooperated with Dora Power Systems company. MATERIAL MODIFICATION USING ION AND PLASMA BEAMS: The technology of modifying surfaces of industrially used materials by means of continuous and pulsed energy beams has been intensely studied for more than 20 years. In some fields it is presently applied on a broad scale in industry. A significant role among various methods is played by continuous or pulsed ion and plasma beams. The P-IX Department jointly with the P-V Department applies some unique sources of intense ion-plasma pulses, and makes use of intense continuous ion beams available in the P-I Department. Main objectives of the Department in this field are: - search for new ways of modifying surface properties of solid materials by means of pulsed plasma beams; - implementation in the Institute and in the country the ion implantation technique as a method of improving the quality of machinery parts and tools applied in industry. These objectives were in 1999 accomplished particularly by research on: - alloying Mo on Ti surfaces by means of intense Mo-N plasma pulses (studies of the mechanical, structural and corrosion resistance properties); - implantation of N ions into selected tools (followed by testing in an industrial environment); - metallization of Al2O3 ceramic surfaces aimed at improving quality of metal-ceramics joints; - combined PVD and DPE techniques applied in a common reactor vessel. The above research was conducted jointly with the P-V Department of SINS, and in cooperation with INCT (Warsaw), Warsaw Technical University, ITME (Warsaw), Forschungszentrum Rossendorf, as well as with some industrial plants. The most distinguished accomplishments in 1999 include development of thermoelectrically-cooled silicon X-ray detectors, development of working prototype of X-ray tube with a needle-like anode, and development of a method of improving surfaces of Al203 ceramics (to be joined with metals) based on use of intense plasma pulses. (author)