Published April 2019 | Version v1
Journal article

Crystal structures and microwave dielectric properties of novel low-permittivity Ba1- x Sr x ZnSi3O8 ceramics

  • 1. Key Lab of Functional Materials for Electronic Information (B), Ministry of Education, Wuhan, 430074 (China)
  • 2. School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074 (China)
  • 3. Department of Physics, Abdul Wali Khan University, Mardan, KP (Pakistan)
  • 4. Engineering Research Center for Functional Ceramics, Ministry of Education, Wuhan, 430074 (China)

Description

Ba1-xSrxZnSi3O8 (x = 0.2–1.0) microwave dielectric ceramics were synthesized using the solid-state method at the temperature from 1087 °C to 1150 °C for 3 h. All compositions showed a single phase for Ba1-xSrxZnSi3O8 when x increased from 0.2 to 1.0, and a phase transition from monoclinic to triclinic structure occurred between 0.8 and 1.0. The relative permittivity of Ba1-xSrxZnSi3O8 ceramics decreased from 6.57 to 6.12 when the Ba2+ ions substituted by Sr2+ ions. However, the quality factor initially decreased from 34,735 GHz (x = 0.2) to 28,986 GHz (x = 0.4) and subsequently increased monotonously. The variation in the temperature coefficient of resonant frequency showed an opposite, slightly changing trend compared with that of the quality factor. A novel single-phase SrZnSi3O8, which possesses good microwave dielectric properties of εr = 6.12, Q×f = 78,064 GHz, and τf = −33.2 ppm/°C, was obtained for the first time at the sintering temperature of 1150 °C.

Additional details

Identifiers

DOI
10.1016/j.materresbull.2018.12.026;
PII
S002554081831465X;

Publishing Information

Journal Title
Materials Research Bulletin
Journal Volume
112
Journal Page Range
p. 178-181
ISSN
0025-5408
CODEN
MRBUAC

Optional Information

Copyright
Copyright (c) 2018 Elsevier Ltd. All rights reserved.