Published November 24, 2008
| Version v1
Journal article
Carrier concentration dependence of terahertz transmission on conducting ZnO films
- 1. Department of Physics, Shanghai University, Shanghai 200444 (China)
- 2. Department of Materials Science, Fudan University, Shanghai 200433 (China)
- 3. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 (China)
Description
With the dc reactive magnetron sputtering method, conducting ZnO thin films with different carrier concentrations on glass substrate were fabricated. The dielectric responses of the ZnO films are characterized with terahertz time-domain spectroscopy. Frequency-dependent conductivity, power absorption, and refractive index are obtained, and the experimental results can be well reproduced with the classic Drude model. Our results reveal that by adjusting the carrier concentration of the ZnO film, the conducting ZnO film can serve as broadband antireflection coatings for substrates and optics in the terahertz frequency range
Additional details
Identifiers
- DOI
- 10.1063/1.3036708;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 93
- Journal Issue
- 21
- Journal Page Range
- p. 211101-211101.3
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 40051147
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ABSORPTION; ANTIREFLECTION COATINGS; CARRIER DENSITY; DEPOSITION; DIELECTRIC MATERIALS; FREQUENCY DEPENDENCE; REFRACTIVE INDEX; SEMICONDUCTOR MATERIALS; SPECTROSCOPY; SPUTTERING; SUBSTRATES; THIN FILMS; THZ RANGE; ZINC OXIDES
- Descriptors DEC
- CHALCOGENIDES; COATINGS; FILMS; FREQUENCY RANGE; MATERIALS; OPTICAL PROPERTIES; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; SORPTION; ZINC COMPOUNDS
Optional Information
- Notes
- (c) 2008 American Institute of Physics