Tuning the thermoelectric response of silicene nanoribbons with vacancies
- 1. Departamento de Física, Universidad Técnica Federico Santa María, Casilla 110 V, Valparaíso (Chile)
- 2. GISC, Departamento de Física de Materiales, Universidad Complutense, E-28040 Madrid (Spain)
Description
In this work, we present a thorough study of the thermoelectric properties of silicene nanoribbons in the presence of a random distribution of atomic vacancies. By using a linear approach within the Landauer formalism, we calculate phonon and electron thermal conductances, the electric conductance, the Seebeck coefficient and the figure of merit of the nanoribbons. We found a sizable reduction of the phonon thermal conductance as a function of the vacancy concentration over a wide range of temperature. At the same time, the electric properties are not severely deteriorated, leading to an overall remarkable thermoelectric efficiency. We conclude that the incorporation of vacancies paves the way for designing better and more efficient nanoscale thermoelectric devices. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/1361-648X/ab7e56Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Physics. Condensed Matter
- Journal Volume
- 32
- Journal Issue
- 27
- Journal Page Range
- [8 p.]
- ISSN
- 0953-8984
- CODEN
- JCOMEL
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 52058138
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- COMMINUTION; CONCENTRATION RATIO; NANOSTRUCTURES; PERFORMANCE; PHONONS; RANDOMNESS; SILICENE; THERMOELECTRIC PROPERTIES; TUNING; VACANCIES
- Descriptors DEC
- CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DIMENSIONLESS NUMBERS; ELECTRICAL PROPERTIES; ELEMENTS; PHYSICAL PROPERTIES; POINT DEFECTS; QUASI PARTICLES; SEMIMETALS; SILICON