Electronic, elastic and piezoelectric properties of boron-V group binary and ternary monolayers
- 1. MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter, School of Science, Xi'an Jiaotong University, Xi'an 710049 (China)
- 2. Qingdao R&D Institute, Xi'an Jiaotong University, QingDao 266300 (China)
- 3. Key Laboratory of Nanomaterials and Nanotechnology of Shaanxi Province, Xi'an 710055 (China)
- 4. Functional Materials Laboratory (FML), School of Materials Science and Engineering, Xi'an University of Architecture and Technology, Xi'an 710055 (China)
Description
Highlights: • Band structures of B–V group ternary monolayers calculated by HSE are presented. • B–V group 2D monolayers are excellent piezoelectric materials with large piezoelectric response. • A volume-expansion-induced "negative pressure" effect is observed in the ternary monolayers. • A "negative pressure" effect increases the coefficient e12 and piezoelectric anisotropy remarkably. • Orientation dependence mechanical and piezoelectric properties of 2D monolayers are presented. -- Abstract: Electronic, elastic, and piezoelectric properties of two-dimensional (2D) boron-V group binary and ternary monolayers are investigated by a density-functional theory (DFT) first-principle calculation. All calculated 2D monolayers show excellent piezoelectric coefficients, comparable with the frequently used bulk α-quartz (2.3 pm/V), α-SiO2 (2.06 pm/V), and wurtzite GaN (3.1 pm/V). In particular, the e12 of ternary BN0.5P0.5 and BN0.5As0.5 (−3.71 × 10−10 C/m and −4.66 × 10−10 C/m, respectively) are significantly larger than their reference binary monolayers BN (−1.35 × 10−10 C/m) and BP (−2.42 × 10−10 C/m), and BAs (−2.65 × 10−10 C/m). Our calculation not only expand the family of piezoelectric nano-materials, but also instruct to design new 2D piezoelectric monolayers with higher piezoelectric response by atom substitution, and to design new nano-devices that integrate piezoelectric and unique physical properties of B–V group compounds.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.physb.2019.08.011Additional details
Identifiers
- DOI
- 10.1016/j.physb.2019.08.011;
- PII
- S0921452619305174;
Publishing Information
- Journal Title
- Physica. B, Condensed Matter
- Journal Volume
- 574
- Journal Page Range
- vp.
- ISSN
- 0921-4526
- CODEN
- PHYBE3
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 54125736
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANISOTROPY; ATOMS; BORON; DENSITY FUNCTIONAL METHOD; DESIGN; GALLIUM NITRIDES; PHYSICAL PROPERTIES; PIEZOELECTRICITY; QUARTZ; SILICA; SILICON OXIDES; TWO-DIMENSIONAL SYSTEMS
- Descriptors DEC
- CALCULATION METHODS; CHALCOGENIDES; CRYSTAL LATTICES; CRYSTAL STRUCTURE; ELECTRICITY; ELEMENTS; GALLIUM COMPOUNDS; MINERALS; NITRIDES; NITROGEN COMPOUNDS; OXIDE MINERALS; OXIDES; OXYGEN COMPOUNDS; PNICTIDES; SEMIMETALS; SILICON COMPOUNDS; VARIATIONAL METHODS
Optional Information
- Copyright
- Copyright (c) 2019 Elsevier B.V. All rights reserved.