Fundamental study of plasma etching physico-chemical mechanisms based on steric effects and diffusion - Forecasted behaviors of the etching of the elements in the group IV and III-V compounds by the halogens: laws of similarity

The objective of this work is the generalization of the modeling of the etching of silicon in fluorine or chlorine plasmas to that of the etching of the elements in column IV and of III-V compounds with diamond-like or zinc-blend crystal structure in halogen plasmas (i.e. fluorine, chlorine, bromine and iodine). In this context, steric effects and volume and/or surface diffusion are the main issues. This generalization is based on the etching model of Petit and Pelletier which, compared to previous models, takes into account a number of separate or additional assumptions such as the repulsive interactions between halogen adatoms in nearest neighbor positions, the Langmuir- Hinshelwood mechanisms for the formation of reaction products, the mono-layer or multi-layer nature of the adsorption, and the diffusion of adatoms on the surface. Steric effects related to the diffusion of halogens through the (100) surfaces of the crystal structures of the elements of column IV and III-V compounds define a first law of similarity between the crystal lattice and the Shannon ionic radius of the halogen atoms concerning their bulk diffusion conditions. This law results in a forecast diagram, common to column IV elements and III-V compounds, delimiting the mono-layer or multi-layer type of the etching systems. Steric effects related to the reaction mechanisms of etching on (100) surfaces lead to the second laws of similarity between the crystal lattice and the covalent radius of halogen adatoms characterizing the etching behavior: isotropic etching, anisotropic etching or no etching. These laws of similarity, distinct between the elements of the column IV and III-V compounds (different stoichiometry of the reaction products), result in two forecast diagrams delimiting the distinct etching domains. Forecast diagrams for column IV elements have been validated, first, from previous experimental results, and, secondly, in the absence of data, from additional experimental studies: etching of Si and Ge in bromine and iodine plasmas, and etching of Sn in iodine plasmas. (author)