Photoluminescence character of Xe ion irradiated sapphire

The photoluminescence (PL) character of sapphire irradiated with 460 keV, 3 MeV and 308 MeV Xe ions were studied. The PL measurements show that the absorption peaks located at 380, 413, and 450 nm are increased, and new peaks are appeared at 390 and 564 nm in irradiated samples with 460 keV Xe ions. The PL measurements also show that the absorption peaks located at 516 and 564 nm appear in irradiated samples with 3 MeV Xe ions, and w hen the Xe ions fluency is increased to 1 × 10¹⁶ cm^-2, the peak at 564 nm is disappeared. The PL measurements show that the absorption peaks are appeared at 357 and 516 nm for the irradiated samples with 308 MeV Xe ions, and the peak become more and more strong with increase of Xe ions fluencies. Infrared spectra show a broadening of the absorption band between 460 cm^-1 and 630 cm^-1 indicating strongly damaged regions formed in the Al₂O₃ samples and position shift of the absorption band in 1000-1300 cm^-1 towards to low wavenumber. (authors)