Characterization of μc-Si:H/a-Si:H tandem solar cell structures by spectroscopic ellipsometry
Description
In order to perform the structural characterization of Si thin-film solar cells having submicron-size rough textured surfaces, we have developed an optical model that can be utilized for the spectroscopic ellipsometry (SE) analysis of a multilayer solar cell structure consisting of hydrogenated amorphous silicon (a-Si:H) and microcrystalline silicon (μc-Si:H) layers fabricated on textured SnO2:F substrates. To represent the structural non-uniformity in the textured structure, the optical response has been calculated from two regions with different thicknesses of the Si layers. Moreover, in the optical model, the interface layers are modeled by multilayer structures assuming two-phase composites and the volume fractions of the phases in the layers are controlled by the structural curvature factor. The polarized reflection from the μc-Si:H layer that shows extensive surface roughening during the growth has also been modeled. In this study, a state-of-the-art solar cell structure with the textured μc-Si:H (2000 nm)/ZnO (100 nm)/a-Si:H (200 nm)/SnO2:F/glass substrate structure has been characterized. The μc-Si:H/a-Si:H textured structure deduced from our SE analysis shows remarkable agreement with that observed by transmission electron microscopy. From the above results, we have demonstrated the high-precision characterization of highly-textured μc-Si:H/a-Si:H solar cell structures. - Highlights: • Characterization of textured μc-Si:H/a-Si:H solar cell structures by ellipsometry • A new optical model using surface area and multilayer models • High precision characterization of submicron-range rough interface structures
Availability note (English)
Available from http://dx.doi.org/10.1016/j.tsf.2013.10.073Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2013.10.073;
- PII
- S0040-6090(13)01684-2;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 571
- Journal Issue
- Part 3
- Journal Page Range
- p. 756-761
- ISSN
- 0040-6090
- CODEN
- THSFAP
Conference
- Title
- 6. international conference on spectroscopic ellipsometry
- Acronym
- ICSE-VI
- Dates
- 26-31 May 2013
- Place
- Kyoto (Japan)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 47004386
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ELLIPSOMETRY; HYDROGENATION; INTERFACES; LAYERS; OPTICAL MODELS; REFLECTION; SILICON; SOLAR CELLS; SUBSTRATES; SURFACE AREA; SURFACES; TEXTURE; THIN FILMS; TIN OXIDES; TRANSMISSION ELECTRON MICROSCOPY; ZINC OXIDES
- Descriptors DEC
- CHALCOGENIDES; CHEMICAL REACTIONS; DIRECT ENERGY CONVERTERS; ELECTRON MICROSCOPY; ELEMENTS; EQUIPMENT; FILMS; MATHEMATICAL MODELS; MEASURING METHODS; MICROSCOPY; OXIDES; OXYGEN COMPOUNDS; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; SEMIMETALS; SOLAR EQUIPMENT; SURFACE PROPERTIES; TIN COMPOUNDS; ZINC COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2013 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.