Study by molecular dynamics of the influence of temperature and pressure on the optical properties of undoped 3C-SiC structures

Highlights: • Dielectric function of undoped 3C-SiC structures is calculated by molecular dynamics. • Evolutions laws of this function with both temperature and pressure are established. • Doping atoms must be introduced to improve absorptance in the visible range. Silicon carbide (SiC)-based open-cell foams appear to be promising porous materials for designing high-temperature energy conversion systems such as volumetric solar receivers. In these media, heat transfers and fluid flows occur simultaneously. The numerical models developed for computing the thermal efficiencies of SiC foams must take into account the energy contribution of thermal radiation. In particular, the thermal radiative properties of these foams must be accurately known. This explains why knowledge of the pressure and temperature dependences of the optical properties of the crystalline parts, which compose the foams, is of primary concern for computing the latter properties correctly. However, the data available in the literature provide the evolution laws of the dielectric functions, needed to calculate the optical properties, as dependent on one thermodynamic parameter at a time. To deal with this issue, a study of the temperature/pressure influence on the dielectric functions of a silicon carbide structure by simulation with molecular dynamics (MD) is presented in this paper. The Vashishta interaction potential, based on the sum of two- and three-body terms, is used in this study. The simulations are carried out on undoped 3C-SiC at pressures ranging from 0.2 to 20 GPa and temperatures ranging from 300 K to 1500 K. The dielectric functions are obtained by applying the linear response theory and comparing them with values provided in the literature, using a Lorentz model. The simulated results, in good agreement with the experimental ones, make it possible to establish the evolution laws of the dielectric functions with both parameters, temperature and pressure, applicable to any field requiring the use of undoped silicon carbide.